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SSM6K34TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K34TU
High Current Switching Applications Power Management Switch Applications
* * 4.5Vdrive Low on resistance: :Ron = 77 m (max) (@VGS = 4.5 V) :Ron = 50 m (max) (@VGS = 10 V) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 20 3 6 500 150 -55~150 Unit V V A mW C C
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm )
Note:
1,2,5,6 : Drain 3 : Gate 4 : Source
JEDEC JEITA TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Electrical Characteristics (Ta = 25C)
Characteristics Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Total gate charge Gate-source charge Gate-drain charge Switching time Turn-on time Turn-off time Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth Yfs RDS (ON) Ciss Crss Coss Qg Qgs Qgd ton toff VDSF VDS = 24 V, IDS= 3.0 A VGS = 10 V VDD = 15 V, ID = 2 A, VGS = 0~10 V, RG = 4.7 ID = -3A, VGS = 0V (Note2) VDS = 10 V, VGS = 0, f = 1 MHz Test Condition ID = 10 mA, VGS = 0 ID = 10 mA, VGS = -20 V VDS = 30 V, VGS = 0 VGS = 16 V, VDS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2 A ID = 2 A, VGS = 4.5 V ID = 2 A, VGS = 10 V (Note2) (Note2) (Note2) Min 30 15 1.3 3.4 Typ. 6.8 58 38 470 60 80 10 7.6 2.4 8.3 22 -0.8 Max 10 10 2.5 77 50 -1.2 ns V pF Unit V A A V S m
nC
Drain-Source forward voltage
Note2: Pulse test
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SSM6K34TU
Switching Time Test Circuit
(a) Test Circuit (b) VIN
OUT IN 0V RG 10 s VDD = 15 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C 10% 10 V 90%
10 V 0
VDD
(c) VOUT
VDD
90% 10% tr ton tf toff
VDS (ON)
Marking
6 5 4
Equivalent Circuit (Top View)
6 5 4
KNC
1 2 3 1 2 3
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
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SSM6K34TU
ID - VDS
5 8.0 4 6.0 10 4.5 3.8 3.5 Common source Ta = 25C Pulse test 10 10 8.0 6.0 4.5
ID - VDS
3.8 Common source Ta = 25C Pulse test
8
ID (A)
3
ID (A)
3.2
6
3.5
Drain current
2 3.0 1 VGS = 2.8 V 0
Drain current
4 3.2 2
3.0 VGS = 2.8 V 0 1 2 3 4 5
0
0.2
0.4
0.6
0.8
1.0
0
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
8 Common source 2.0 VDS = 10 V Pulse tset 6
VDS - VGS
Common source Ta= 25 Pulse test
(V) VDS Drain-source voltage
25 100 Ta = -55C
1.6
(A)
Drain current ID
1.2
4
0.8
2
0.4 1
2
ID = 4A
0
0
1
2
3
4
5
0
0
2
4
6
8
10
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID
100 100 Common source VDS = 10 V Ta = -55C 10 100 25 Pulse test
RDS (ON) - ID
Forward transfer admittance Yfs (S)
Drain-source ON resistance RDS (ON) (m)
4.5
30
VGS = 10V
1
Common source Ta = 25C Pulse test 1 10
0.1
0
0.3
1
3
10
10 0.1
Drain current ID (A)
Drain current ID (A)
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SSM6K34TU
RDS (ON) - Ta
120 Common source ID = 4A 2A VGS = 4.5V 60 1A Pulse test 10 10
IDR - VDS
5.0 3.0 1.0 VGS = 0 V 1 0.5 0.3 Common source Ta = 25C Pulse test 0.1 0
Drain reverse current IDR (A)
100
5 3
Drain-source ON resistance RDS (ON) (m )
80
40 ID = 4, 2, 1A 20
VGS = 10V
0 -80
-40
0
40
80
120
160
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Ambient temperature Ta (C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
1000 Ciss 3
Vth - Ta
(pF)
100
Vth (V)
Crss
10
Gate threshold voltage
Coss
2
Capacitance C
Common source VGS = 0 V f = 1 MHz Ta = 25C
1
Common source VDS = 10 V ID = 1mA Pulse test
1 0.1
0.3
1
3
5
10
30 50
100
0 -80
-40
0
40
80
120
160
Drain-source voltage
VDS (V)
Ambient temperature Ta (C)
Dynamic Input Characteristic
Common Source
rth - tw
100
(V)
ID = 3.0 A 8 Ta = 25C
Gate-Source voltage VGS
rth (C /W)
VDD = 24V
10
100
VDD = 15V
4
Transient thermal impedance
6
10
Single Pulse Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm )
2
2
0
0
2
4
6
8
10
1 0.00
0.01
0.1
1
10
100
1000
Total Gate Charge
Qg
(nC)
Pulse width
tw
(s)
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SSM6K34TU
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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